Low-field and anomalous high-field Hall effect in (TMTSF)2ClO 4
نویسندگان
چکیده
منابع مشابه
Anomalous Hall effect
We present a review of experimental and theoretical studies of the anomalous Hall effect (AHE), focusing on recent developments that have provided a more complete framework for understanding this subtle phenomenon and have, in many instances, replaced controversy by clarity. Synergy between experimental and theoretical work, both playing a crucial role, has been at the heart of these advances. ...
متن کاملHall and field-effect mobilities in few layered p-WSe2 field-effect transistors
Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfoliated onto SiO2. Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm(2)/Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm(2)/Vs as T is...
متن کاملUpper Critical Field and Hall effect in superconducting perovskite
Upper critical field H c2 and Hall coefficient R H in superconducting per-ovskite M gCN i 3 have been studied. The normal state ρ(T) behavior is similar to that observed in oxide perovskite (Ba, K)BiO 3 (BKBO), in which ρ(T) fits well curve predicted by Bloch-Grüneisen theory consistently with electron-phonon scattering. H c2 (T), determined from the onset of the resis-tive superconducting tran...
متن کاملHall effect in an AC electric field and related phenomena
Nonlinear Hall effect in an AC electric field and related phenomena. Abstract It has been shown that in metals and semiconductors the joint action of permanent magnetic and AC electric fields leads to arising of DC surface electric current. The physical reason for such a current is due to essentially non-linear dynamics of electronic gas in the surface layer. In adiabatic limit the analytical e...
متن کامل4 A spin field effect transistor for low leakage current
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the " off "-state, resulting in significant standby power dissipation....
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal de Physique Lettres
سال: 1983
ISSN: 0302-072X
DOI: 10.1051/jphyslet:019830044023095300